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祁菁

【来源:物理学院 | 发布日期:2013-04-08 | 作者:null 】     【选择字号:

祁菁 教授 性别:女
  凝聚态物理研究生导师、材料工程专业学位导师

  地址:兰州市天水南路222号, 兰州大学物理科学与技术学院

电话:13919762894 传真:0931-8913554  
电子邮件:qijing@lzu.edu.cn  
个人简介:
1、2009年8月-2011年7月加州大学河滨分校(博士后)
2、2002年8月-2006年12月兰州大学(理学博士)
3、1997年8月-2000年7月兰州大学(工学硕士)
4、1993年8月-1997年7月兰州大学(工学学士)
研究方向:
1、自旋电子学材料及器件
2、半导体材料及器件
研究工作:
目前主要进行三个方面的研究工作:
1、半导体纳米材料的稀磁特性
2、氧化物纳米材料的阻变存储特性
3、纳米结构阴极发光及场发射特性
主要主持及参与以下几个项目
1、透明室温铁磁半导体Zn1-xErxO的制备及磁性机理研究(国家自然科学基金,主持);
2、ZnO基阻变存储器制备、特性及机理研究(中央高校科研业务费,主持);
3、稀磁半导体材料ZnLaO的阻变存储特性研究(磁学与磁性材料教育部重点实验室开放课题项目,主持);
4、过渡金属掺杂硅基稀磁半导体薄膜材料的制备及特性研究(省自然科学研究基金计划,主持);
5、稀磁半导体材料Zn1-xErxO薄膜的制备及特性研究(磁学与磁性材料教育部重点实验室开放课题项目,主持);
6、过渡金属掺杂ZnO基稀磁半导体薄膜材料的制备及特性研究(兰州大学物理科学与技术学院青年教师资助计划,主持);
7、镁离子二次电池氧化物正极材料的制备和特性研究(国家自然科学基金项目,主要参与)。
发表论文:
发表论文
1、 Rongfang Zhang, You Li, Jing Qi* and Daqiang Gao*, Ferromagnetism in ultrathin MoS2 nanosheets: from amorphous to crystalline, Nanoscale Research Letters, 9, 586 (2014)
2、 Mei Long, Haolei Zhou, Daqiang Gao, Cangji Wu, Meng Gao, Jiafeng Shao, Jing Qi*, Room temperature ferromagnetism in Zn0.99La0.01O and pure ZnO nanoparticles, Materials Chemistry and Physics, 145, 510-514 (2014)
3、 Jian Huang, Jing Qi, Zonglin Li, Jianlin Liu*, Vertically aligned nanostructures based on Na-doped ZnO nanorods for wide band gap semiconductor memory applications, Nanotechnology, 24, 395203 (2013).
4、 Jing Qi*, Mario Olmedo, Jian-Guo Zheng, Jianlin Liu*, Multimode Resistive Switching in Single ZnO Nanoisland System, Scientific Reports, 3, 2405 (2013). (Nature旗下新刊)
5、 Jing Qi, Jian Huang, Dennis Paul, Jingjian Ren, Sheng Chu, Jianlin Liu, Current self-complianced and self-rectifying resistive switching in Ag-electroded single Na-doped ZnO nanowires, Nanoscale, 5 (7), 2651-2654 (2013). (SCI一区,IF2011=5.914)
6、 Jing Qi, Qing Zhang, Jianlin Liu, The effect of top contact on ZnO write-once–read-many-times memory, Phys. Status Solidi RRL 6, No. 12, 478–480 (2012). (SCI二区,IF2011=2.218)
7、 Jing Qi, Mario Olmedo, Jingjian Ren, Ning Zhan, Jianze Zhao, Jian-Guo Zheng, Jianlin Liu, Resistive Switching in Single Epitaxial ZnO Nanoislands, ACS Nano, 6 (2), 1051-1058 (2012). (SCI一区,IF2011=11.421)
8、 Jing Qi, Jingjian Ren, Mario Olmedo, Ning Zhan and Jianlin Liu, Unipolar resistive switching in Au/Cr/Mg0.84Zn0.16O2?δ/p+-Si, Appl. Phys. A 107 (4), 891-897 (2012). (SCI三区,IF2011=1.630)
9、 Jing Qi, Qing Zhang, Jian Huang, Jingjian Ren, Mario Olmedo, and Jianlin Liu, Write-Once–Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage, IEEE Electron Device Letters, 32 (10), 1445, OCTOBER 2011. (SCI二区,IF2011=2.849)
10、Daqiang Gao, Jing Zhang, Guijin Yang, Jing Qi, Mingsu Si, and Desheng Xue, Ferromagnetism Induced by Oxygen Vacancies in Zinc Peroxide Nanoparticles, The Journal of Physical Chemistry C, 115, 16405 (2011). (SCI一区,IF2011=4.805)
11、Daqiang Gao, Zhaolong Yang, Jing Zhang, Guijin Yang, Zhonghua Zhu, Jing Qi, Mingsu Si, and Desheng Xue, Transforming from paramagnetism to room temperature ferromagnetism in CuO by ball milling, AIP ADVANCES 1, 042168 (2011).
12、Daqiang Gao, Jing Zhang, Guijin Yang, Jinlin Zhang, Zhenhua Shi, Jing Qi, Zhaohui Zhang and Desheng Xue, Ferromagnetism in ZnO Nanoparticles Induced by Doping of a Nonmagnetic Element: Al, The Journal of Physical Chemistry C, J. Phys. Chem. C, 2010, 114 (32), pp 13477–13481. (SCI一区,IF2011=4.805)
13、Li Zhang, Shihui Ge, Yalu Zuo, Juan Wang and Jing Qi, Ferromagnetic properties in undoped and Cr-doped SnO2 nanowires, Scripta Materialia, 63 (2010) 953–956. (SCI二区,IF2011=3.024)
14、Jing Qi, Daqiang Gao, Jinhong Liu, Wenge Yang, QiWang, Jinyuan Zhou, Yinghu Yang,  Jianlin Liu, Magnetic properties of Er-doped ZnO films prepared by reactive magnetron sputtering, Appl Phys A 100 (1)79–82 (2010). (SCI三区,IF2011=1.630)
15、Daqiang Gao, Jing Zhang, Jingyi Zhu, Jing Qi, Zhaohui Zhang, Wenbo Sui, Huigang Shi and Desheng Xue, Vacancy-Mediated Magnetism in Pure Copper Oxide Nanoparticles, Nanoscale Res Lett 5 (2010) 769–772. (SCI二区,IF2011=2.726)
16、Jing Qi, Daqiang Gao, Li Zhang and Yinghu Yang, Room-temperature Ferromagnetism of the Amorphous Cu-doped ZnO thin films, Applied Surface Science, 256(8)2507–2508 (2010). (SCI三区,IF2011=2.103)
17、Daqiang Gao, Zhaohui Zhang, Junli Fu, Yan Xu, Jing Qi, and Desheng Xue, Room temperature ferromagnetism of pure ZnO nanoparticles, J. Appl. Phys. 105, 113928 (2009). (SCI三区,IF2011=2.168)
18、Jing Qi, Yinghu Yang, Li Zhang, Junhong Chi, Daqiang Gao, Desheng Xue, Room-temperature ferromagnetism in Er-doped ZnO thin films. Scripta Materialia 60, 289–292(2009). (SCI二区,IF2011=3.024)
19、Jing Qi, Yang Yang, Deyan He, Polycrystalline silicon-germanium Films Prepared by Aluminum-induced crystallization, J. Electrochem. Soc., 155, H903-H908 (2008). (SCI二区,IF2011=2.59)
20、Jing Qi, Yang Yang, and Deyan He, AlCl3-induced Crystallization of Amorphous Silicon Thin Films, Applied Surface Science, 254, 2605-2608 (2008). (SCI三区,IF2011=2.103)
21、祁菁,金 晶,胡海龙,高平奇,袁保和,贺德衍,H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响,物理学报,55(2006)5959-5963。Qi Jing, Jin Jing, Hu Hai-long, Gao Ping-Qi, Yuan Bao-He, He De-Yan, Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4, Acta Phys. Sin., 55 (2006) 5959-5963. (SCI四区,IF2011=1.027)
22、祁菁,金晶,胡海龙,贺德衍*,Al诱导a-Si:H薄膜的晶化,真空科学与技术,25(2005)57-60。Qi Jing, Jin Jing, Hu Hailong, He Deyan, Al-induced Crystallization of Hydrogenated Amorphous Silicon Films, J. Vac. Sci. Tech. (China) 25 (2005)57-60.
23、胡海龙;彭尚龙;唐泽国;祁菁;贺德衍,在AAO衬底上制备纳米Si阵列研究,兰州大学学报(自然科学版),43 (2007) 96-98。HU Hai-long,PEN G Shang-long,TANG Ze-guo,QI Jing,HE De-yan, Preparation of nano-crystalline Si arrays by plasm a enhanced CVD using porous alumina templates, J. Lanzhou University (Natural Science) 43 (2007) 96-98;
24、王晓强,栗军帅,陈 强,祁菁,尹旻,贺德衍*,电感耦合等离子体CVD低温生长硅薄膜过程中的铝诱导晶化,物理学报,54(2005)269-273。Wang Xiao-Qiang, Li Jun-Shuai, Chen Qiang, Qi Jing, Yin Min, He De-Yan, Aluminium-induced crystallization during deposition of silicon films by inductively coupled plasma CVD, Acta Phys. Sin., 54 (2005) 269-273.
25、Fujia Zhang, Dejiang Zhang, Jie Zhang, Jing Qi, Yanyun Wang, Fengmin Liu, Runjin Gan, X-ray double crystal diffraction and Raman spectra measurements of AlP/GaP short-period superlattices, Semiconductor Science and Technology, 14 (1999) 727-730.
研究成果:
研究组成员:
1、合作者:
(1)加州大学河滨分校Jianlin Liu教授研究组(http://qsl.ee.ucr.edu./);
2、组内成员:龙梅,张榕芳,陈思。
3、邀请:诚邀喜欢稀磁半导体、阻变存储、场发射等三个研究方向的实验或理论模拟研究工作的同学加入我们课题组,有意者可与祁菁联系,电话:13919762894;Email: qijing@lzu.edu.cn. (注:阻变存储方向的学生可能需要赴美进行合作研究,因此要求对该方向感兴趣的同学有较强的英语听说能力)。