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高存绪

【来源:物理学院 | 发布日期:2018-03-28 | 作者:null 】     【选择字号:

高存绪 教授 性别:男

低维材料与微观磁性研究所

凝聚态物理专业

地址:兰州市天水南路222号, 兰州大学物理科学与技术学院
电话: 传真:0931-8914160
电子邮件:gaocunx@lzu.edu.cn  
个人简介:

高存绪,博士,教授,博士生导师。

1996年9月——2000年7月,兰州大学物理科学与技术学院,应用物理专业,本科。

2000年9月——2003年7月,兰州大学物理科学与技术学院,凝聚态物理专业,硕士。

2003年8月——2007年8月,韩国忠南大学材料工学院,材料工学专业,博士。

2007年9月——2011年8月,德国Paul-Drude固体电子学研究所,博士后研究。

2011年9月——2017年5月,兰州大学副教授。

2017年5月——至今,兰州大学教授。

至今在Physical Review Letters、Small、Physical Review B、Applied Physics Letters和ACS Applied Materials & Interfaces等杂志上发表SCI论文四十余篇。

主持国家自然科学基金面上项目2(1项在研,1项结题)

研究方向:

1、固体的微结构与磁电性质

2、磁学与磁性材料

3、磁性薄膜与自旋电子学

4、薄膜材料物理

研究工作:

1、金属合金薄膜的晶体结构相变、电相变和磁相变

2、反铁磁自旋电子学

3、半金属Heusler合金的磁性和输运行为 (国家自然科学面上基金 2017.01-2020.12

4、外延生长金属单晶薄膜的自然共振频率和磁导率关系研究 (国家自然科学面上基金 2013.01-2016.12

发表论文:
SCI:
1. Z. D. Chen, W. W. Kong, K. Mi, G. L. Chen, P. Zhang, X. L. Fan, C. X. Gao*, and D. S. Xue*, “The anisotropic effective damping of thickness-dependent epitaxial Co2FeAl films studied by spin rectification”, Applied Physics Letters112, 122406 (2018)
2. P. Zhang, B. H. Xu, G. L. Chen, C. X. Gao*, and M. Z. Gao*, “Large-scale synthesis of nitrogen doped MoS2 quantum dots for efficient hydrogen evolution reaction”, Electrochimica Acta, (2018) DOI: 10.1016/j.electacta.2018.03.097
3. C. Zhou, L. K. Shen, M. Liu, C. X. Gao, C. L. Jia, and C. J. Jiang, “Strong nonvolatile magnon-driven magnetoelectric coupling in single-crystal Co/[PbMg1/3Nb2/3O3]0.71[PbTiO3]0.29 heterostructures”, Physical Review Applied, 9, 014006 (2018)
4. G. L. Chen, P. Zhang*, L. L. Pan, L. Qi, F. C. Yu, C. X. Gao*,  “Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites”, Journal of Materials Chemistry C, 5, 9799-9805 (2017)
5. Z. D. Chen, C. X. Gao*, Y. P. Wei, P. Zhang, Y. T. Wang, C. Zhang, Z. K. Ma, “Large non-volatile tuning of magnetism mediated by electric field in Fe–Al/ Pb(Mg1/3Nb2/3)O3–PbTiO3 heterostructure”, Journal of Physics D: Applied Physics, 8, 30336-30343 (2017)
6. K. Mi, J. F. Xie, M. S. Si*,  C. X. Gao*, “Layer-stacking effect on electronic structures of bilayer arsenene”, Euro Physics Letters, 117, 27002 (2017)
7. P. Zhang, B. H. Xu, C. X. Gao*, G. L. Chen, M. Z. Gao*, “Facile synthesis of Co9Se8 quantum dots as charge traps for flexible organic resistive switching memory device”, ACS Applied Materials & Interfaces, 8, 30336-30343 (2016)
8. F. Z. Lv, C. X. Gao*, H. A. Zhou, P. Zhang, K. Mi, and X. X. Liu, “Nonvolatile bipolar resistive switching behavior in the perovskite-like (CH3NH3)2FeCl4”, ACS Applied Materials & Interfaces, 8, 18985-18990 (2016)
9. Y. P. Wei, C. X. Gao*, Z. D. Chen, S. B. Xi, W. X. Shao, P. Zhang, G. L. Chen, and J. G. Li, “Four-state memory based on a giant and non-bolatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure”, Scientific Reports, 6, 30002 (2016)
10. P. Zhang#, C. X. Gao*, B. H. Xu#, L. Qi, C. J. Jiang, M. Z. Gao, and D. S. Xue*, “Structural phase transition effect on resistive switching behavior of MoS2-polyvinylpyrrolidone nanocomposites films for flexible memory device”, Small, 12, 2077-2084 (2016)
11. J. K. Zhou, T. Wang, W. Wang, S. W. Chen, Y. Cao, H. P. Liu, M. S. Si, C. X. Gao, D. Z. Yang*, and D. S. Xue*, ' Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling', Applied Physics Letters109, 232404 (2016)
12. C. X. Gao*, C. H. Dong, C. L. Jia, D. S. Xue*, J. Herfort, and O. Brandt, “In-plane sixfold symmetry for α-Fe(110) on GaN{0001}: Measurement of the cubic anisotropy constant K3 of Fe”, Physical Review B, 92, 094404 (2015)
13.  C. X. Gao#, Y. T. Wang#*, C. Y. Li, Y. P. Wei, Z. D. Chen, G. Z. Chai, and D. S. Xue*, “Multidirectional available high frequency response with zero-field resonance above 8 GHz in epitaxial α-Fe(001) films”, Applied Physics Express8, 053001 (2015)
14. C. X. Gao, P. Zhang*, B. H. Xu, Z. D. Chen, L. Qi, C. Zhang, C. H. Dong, C. J. Jiang, Q. F. Liu, and D. S. Xue*, “Nonvolatile bipolar resistive switching behavior of epitaxial NdFeO3-PbTiO3 films grown on Nb:SrTiO3 (001) substrate”, Applied Physics Express, 8, 051102 (2015)
15. C. X. Gao#, F. Z. Lv#*, P. Zhang, C. Zhang, S. M. Zhang, C. H. Dong, Y. C. Gou, C. J. Jiang, and D. S. Xue*, “Tri-state bipolar resistive switching behavior in a hydrothermally prepared epitaxial BiFeO3 film”, Journal of Alloys and Compounds649, 694-698 (2015)
16. F. Z. Lv, C. X. Gao*, P. Zhang, C. H. Dong, C. Zhang, and D. S. Xue*, “Bipolar resistive switching behavior of CaTiO3 films grown by hydrothermal epitaxy”, RSC Advances5, 40714-40718 (2015)
17. C. X. Gao#, P. Zhang#*, C. Zhang, C. H. Dong, C. J. Jiang, Q. F. Liu, and D. S. Xue*, “Multiferroic and multilevel resistive switching properties of LaFeO3-PbTiO3 films grown on Nb:SrTiO3 (001) substrate”, Ceramics International, 41, S851-S855 (2015)
18. C. Zhang, F. L. Wang, C. H. Dong, C. X. Gao, C. L. Jia, C. J. Jiang*, and D. S. Xue*, “Electric field mediated non-volatile tuning magnetism at the single-crystalline Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 interface”, Nanoscales, 7, 4187-4192 (2015)
19. X. L. Fan*, W. Wang, Y. T. Wang, H. A. Zhou, J. W. Rao, X. B. Zhao, C. X. Gao, Y. S. Gui, C. M. Hu, and D. S. Xue, 'Rapid characterizing of ferromagnetic materials using spin rectification', Applied Physics Letters105, 262404 (2014)
20. J. Zhang#, Z. L. Yang, F. Z. Lv, C. X. Gao#*, and D. S. Xue*, 'Tuning unexpected room temperature ferromagnetism in heteroepitaxial PbTiO3 thin films fabricated by hydrothermal epitaxy: crystal quality', RSC Advances4, 61046-61050 (2014)
21. P. Zhang#,  C. X. Gao#*, F. Z. Lv, Y. P. Wei, C. H. Dong, C. L. Jia, Q. F. Liu, and D. S. Xue*, 'Hydrothermal epitaxial growth and nonvolatile bipolar resistive switching behavior of LaFeO3-PbTiO3 films on Nb:SrTiO3(001) substrate', Applied Physics Letters105, 152904 (2014)
22.  F. Z. Lv, J. Zhang, C. X. Gao*, L. Ma, D. Q. Gao, S. M. Zhou, and D. S. Xue*, 'Hydrothermal epitaxy and resultant properties of EuTiO3 films on SrTiO3(001) substrate', Nanoscale Research Letters9, 266 (2014)
23. Y. T. Wang, F. Z. Lv, O. Brandt, J. Herfort, C. X. Gao*, and D. S. Xue, 'Uniaxial magnetic anisotropy in epitaxial α-Fe(h0l) films', Annalen der Physik526, L1–L5 (2014)
24. Y. P. Wei, C. X. Gao*, C. H. Dong, Z. K. Ma, J. G. Li, and D. S. Xue, 'Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxy', Applied Surface Science293, 71-75 (2014)
25. S.  Fernández-Garrido*, K. U. Ubben, J. Herfort, C. X. Gao, and O. Brandt, “Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts”, Applied Physics Letters, 101, 032404 (2012)
26. S. C. Erwin, C. X. Gao, C. Roder, J. L?hnemann, and O. Brandt, “Epitaxial interfaces between crystallographically mismatched materials”, Physical Review Letters, 107, 026102 (2011)
27. C. X. Gao*, R. Farshchi, C. Roder, P. Dogan, and O. Brandt, “GaN/Fe core/shell nanowires for nonvolatile spintronics on Si”, Physical Review B, 83, 245323 (2011)
28. C. X. Gao*, O. Brandt, J. L?hnemann, J. Herfort, H.-P. Sch?nherr, U. Jahn,  and B. Jenichen, “Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)”, Journal of Crystal Growth323, 359-362 (2011)
29. C. X. Gao*, O. Brandt, S. C. Erwin, J. L?hnemann, U. Jahn, B. Jenichen, and H.-P. Sch?nherr, “’Cube-on-hexagon’ orientation relationship for Fe on GaN(000-1): the missing link in bcc/hcp epitaxy”, Physical Review B82, 125415 (2010)
30. C. X. Gao*, H.-P. Sch?nherr, and O. Brandt, “Re?ection high-energy electron diffraction φ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy”, Applied Physics Letters97, 031906 (2010)
31. C. X. Gao*, O. Brandt, H.-P. Sch?nherr, U. Jahn, J. Herfort, and B. Jenichen, “Thermal stability of epitaxial Fe films on GaN(0001)”, Applied Physics Letters95, 111906 (2009)
32. C. X. Gao, F. C. Yu, D. J. Kim*, H. J. Kim, Y. E. Ihm, M. H. Jung, Y. H. Jo, C. G. Kim, and C. S. Kim, “Magnetic properties of Mn doped GaN grown using single GaN precursor via molecular beam epitaxy”, Journal of the Korean Physical Society54, 633-636 (2009)
33. C. X. Gao, F. C. Yu, D. J. Kim*, H. J. Kim, Y. E. Ihm, C. G. Kim, and C. S. Kim, “p-GaN growth from a single GaN precursor via molecular beam epitaxy and dopant activation”, Journal of the Korean Physical Society51, 112-119 (2007)
34. H. M. Jin*, D. S. Sun, C. X. Gao, and H. J. Kim, “Inverted hysteresis loops: Experimental artifacts arising from inappropriate or asymmetric sample positioning and the misinterpretation of experimental data”, Journal of Magnetism and Magnetic Materials, 308, 56-60 (2007)
35. P. Parchinskiy, F. C. Yu, C. X. Gao, S. W. Lee, D. J. Kim*, H. J. Kim, and Y. E. Ihm, “Transport properties in MnAs-precipitated GaMnAs layer”, Journal of Electroceramics, 17, 1047-1050 (2006)
36. C. X. Gao, F. C. Yu, A. R. Choi, D. J. Kim*, C. G. Kim, C. S. Kim, H. J. Kim, and Y. E. Ihm, “A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy”, Journal of Crystal Growth, 291, 60-65 (2006)
37. C. X. Gao, F. C. Yu, S. Y. Jeong, A. R. Choi, P. Parchinskiy, D. J. Kim*, H. J. Kim, Y. E. Ihm, C. G. Kim, and C. S. Kim,  “The magnetic properties of Be-codoped GaMnN grown via molecular beam epitaxy”, Journal of Magnetism and Magnetic Materials, 304, e158-e160 (2006)
38. F. C. Yu, C. X. Gao, S. Y. Jeong, P. Parchinskiy, D. J. Kim*, H. J. Kim, and Y. E. Ihm, “Effect of annealing on the electric and magnetic properties of GaMnAs and Be-codoped GaMnAs”, Journal of Magnetism and Magnetic Materials, 304, e155-e157 (2006)
39. F. C. Yu, C. X. Gao, D. J. Kim*, S. K. Hong, H. J. Kim, Y. E. Ihm, and C. S. Kim,  “Effects of Be-codoping on the properties of GaMnAs films grown via low-temperature molecular beam epitaxy”, Journal of the Korean Physical Society, 49, 596-603 (2006)
40. P. Parchinskiy, F. C. Yu, C. X. Gao, S. W. Lee, D. J. Kim*, H. J. Kim, and Y. E. Ihm, “Influence of phase segregation process on transport properties of dilute magnetic semiconductors”, Journal of Magnetism and Magnetic Materials, 304, e137-e139 (2006)
41. P. Parchinskiy, F. C. Yu, S. Y. Jeong, C. X. Gao, D. J. Kim*, H. J. Kim, and Y. E. Ihm, “Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters”, Applied Surface Science, 253, 515-518 (2006)
42. D. S. Xue, L. Y. Zhang*, C. X. Gao, X. F. Xu, and A. B. Gui, “Synthesis, M?ssbauer spectra and magnetic properties of quasi-one-dimensional Fe3O4 nanowires”, Chinese Physics Letters, 21, 733-736 (2004)
43. L. Y. Zhang, D. S. Xue*, X. F. Xu, and A. B. Gui, C. X. Gao, “The fabrication and magnetic properties of nanowire-like iron oxide”, Journal of Physics: Condensed Matter, 16, 4541-4548 (2004)
44. K. J. Lee, K. H. Kim, F. C. Yu, W. S. Im, C. X. Gao, D. J. Kim*, H. J. Kim, and Y. E. Ihm, “Magnetic properties of GaMnN grown via molecular beam epitaxy using a single precursor”, Physica Status Solidi (b), 241, 2854-2857 (2004)
45. L. Y. Zhang, D. S. Xue*, and C. X. Gao, “Anomalous magnetic properties of antiferromagnetic CoO nanoparticles”, Journal of Magnetism and Magnetic Materials, 267, 111-114 (2003)
46. D. S. Xue*, C. X. Gao, Q. F. Liu, and L. Y. Zhang, “Preparation and characterization of haematite nanowire arrays”, Journal of Physics: Condensed Matter, 15, 1455-1459 (2003)
47. Q. F. Liu, C. X. Gao, J. J. Xiao, and D. S. Xue*, “Size effects on magnetic properties in Fe0.68Ni0.32 alloy nanowire arrays”, Journal of Magnetism and Magnetic Materials, 260, 151-155 (2003)
48. C. X. Gao, Q. F. Liu, and D. S. Xue*, “Preparation and characterization of amorphous β-FeOOH nanowire arrays”, Journal of Materials Science Letters, 21, 1781-1783 (2002)
 
Non-SCI:
1. 刘青芳王建波高存绪薛德胜李发伸, 'Fe0.68Ni0.32合金纳米线阵列的磁性行为', 兰州大学学报自然科学版), 40 (6), 31-33, 2004 (万方)
2. 刘青芳崔作龙肖君军高存绪薛德胜, '铁纳米线阵列的结构与微观磁性', 甘肃科学学报, 15(1), pp 26-29, 2003 (万方)
3. 张丽英高存绪薛德胜, 'Fe<,3>O<,4>纳米线阵列的制备与表征', 第九届全国穆斯堡尔谱学会议, 2003/12/22 (万方)
研究成果:
获甘肃省科技进步二等奖、甘肃省高校进步一等奖各一次。
研究组成员:

 
在读研究生:
2015级博士生(作为副导师指导):张鹏
2015级硕士生:陈桂霖、米魁
2016级硕士生:陈棚
2017级硕士生:连仲渊、王永祚
 
已毕业研究生:
2017届博士生:吕凤珍
2017届博士生(作为副导师指导):魏彦平
 
2014届硕士:吕凤珍
2014届硕士(作为副导师指导):魏彦平
2016届硕士(作为副导师指导):王昱天
2017届硕士生:陈振东、齐麟