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李颖弢

【来源:物理学院 | 发布日期:2013-04-27 | 作者:null 】     【选择字号:
 
李颖弢 副教授 性别:男
微电子学研究所
地址:兰州市天水南路222号, 兰州大学物理科学与技术学院
电话: 传真:0931-8913554  
电子邮件:li_yt06@lzu.edu.cn  
个人简介:

李颖弢,2006年7月和2011年7月分别获得兰州大学微电子学与固体电子学专业学士和博士学位。主要从事新型非挥发性存储器器件的研究工作。目前主持国家自然科学基金项目1项,教育部博士点基金1项。

研究方向:

1、新型非挥发性阻变存储器研究;

2、高密度存储器件集成研究;

研究工作:
发表论文:
1.Yingtao Li, Hangbing Lv, Qi Liu, Shibing Long, Ming Wang, Hongwei Xie, Kangwei Zhang, Zongliang Huo, and Ming Liu, “Bipolar one diode–one resistor integration for high-density resistive memory applications”, Nanoscale, 5, 4785–4789, 2013.
2.Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Ming Wang, Hongwei Xie, Kangwei Zhang, Xiaoyi Yang, and Ming Liu, “Novel self-compliance bipolar 1D1R memory device for high-density RRAM application”, International Memory Workshop (IMW), May 26-29, 2013, Monterey, CA.
3.Yingtao Li, Qingchun Gong, Rongrong Li, and Xinyu Jiang, “A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications”, Nanotechnology, 25,185201, 2014.
4.Yingtao Li, Qingchun Gong, and Xinyu Jiang, “Feasibility of Schottky diode as selector for bipolar-type resistive random access memory applications”, Applied Physics Letters, 104, 132105, 2014.
5.Yingtao Li, Liping Fu, Chunlan Tao, Xinyu Jiang, and Pengxiao Sun, “Feasibility study of using a Zener diode as the selection device for bipolar RRAM and WORM memory arrays”, Journal of Physics D: Applied Physics, 47, 025103, 2014.
6.Yingtao Li, Xiaoyi Hu, Rongrong Li, Enzi Chen, Qingchun Gong, and Chunlan Tao, “Oxide based two diodes-one resistor structure for bipolar RRAM crossbar array”, Microelectronic Engineering, 130, 35-39, 2014.
7.Yingtao Li, Xinyu Jiang, and Chunlan Tao, “A self-rectifying bipolar RRAM device based on Ni/HfO2/n+-Si structure”, Modern Physics Letters B, 28, 1450030, 2014.
8.Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Wei Wang, Qin Wang, Zongliang Huo, Yan Wang, Sen Zhang, Su Liu, and Ming Liu, “Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device”, IEEE Electron Devices Lett., 32 (3), 363-365, 2011.
9.Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Yan Wang, Sen Zhang, Wentai Lian, Ming Wang, Kangwei Zhang, Hongwei Xie, Su Liu, and Ming Liu, “Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer”, Nanotechnology, 22 (25), 254028, 2011.
10.Yingtao Li, Shibing Long, Qi Liu, Hangbing Lv, Su Liu, and Liu Ming, “An overview of resistive random access memory devices”, Chinese Sci Bull, 56 (28-29), 3072-3078, 2011.
11.Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Qin Wang, Yan Wang, Sen Zhang, Su Liu, and Ming Liu, “Investigation of resistive switching behaviors in WO3-based RRAM devices”, Chinese Physics B, 20 (1), 017305, 2011.
12.Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Qin Wang, Yan Wang, Sen Zhang, Su Liu, and Ming Liu, “Improvement of resistive switching uniformity in TiOx film by nitrogen annealing ”, J. Korean Phys. Soc., 58 (3), L407-L410, 2011.
13.Yingtao Li, Shibing Long, Manhong Zhang, Qi Liu, Lubing Shao, Sen Zhang, Yan Wang, Qingyun Zuo, Su Liu, and Ming Liu, “Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory”, IEEE Electron Devices Lett., 31 (2), 117-119, 2010.
14.Yingtao Li, Shibing Long, Qi Liu, Qin Wang, Manghong Zhang, Hangbing Lv, Lubing Shao, Yan Wang, Sen Zhang, Qingyun Zuo, Su Liu, and Ming Liu, “Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures”, Phys. Status Solidi RRL, 4 (5-6), 124-126, 2010.

 

研究成果:

发表SCI相关学术论文50多篇,其中第一作者SCI论文13篇,包括一区3篇,二区3篇。

研究组成员: